Samsung Commences Production of 512 GB UFS NAND Flash Memory: sixty four-Layer V-NAND, 860 MB/s Reads

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Samsung on Tuesday declared that it experienced initiated quantity creation of UFS NAND flash memory chips with 512 GB capability based mostly on its hottest sixty four-layer 512 Gb V-NAND. The new UFS packages use Samsung’s hottest controller, which sport some performance advancements above its predecessors. The new UFS units are anticipated to be utilized for several applications, together with smartphones, tablets, standalone VR headsets, TVs and other.

Samsung’s 512 GB eUFS unit is the company’s first embedded UFS storage remedy to use the hottest sixty four-layer 512 Gb TLC V-NAND along with the new controller that capabilities an enhanced NAND mapping table administration. The 512 GB chip stacks 8 of the aforementioned NAND dies and is speced for up to 860 MB/s sequential study speeds as effectively as up to 255 MB/s sequential create speeds, which is in line with the company’s 256 GB eUFS unit launched in 2016. When it comes to random operations, Samsung’s 512 GB eUFS provides up to 42,000/forty,000 study/create IOPS, related to the predecessors showcasing 48-layer 256 Gb V-NAND ICs. Speaking of previous-gen UFS two.1 methods with sixty four GB, 128 GB and 256 GB capacities, the producer will preserve them in the fleet because of to performance, generate, and other explanations.

The new 512 GB UFS chip from Samsung makes use of two full-duplex HS-Gear3 lanes with five.8 GT/s information transfer rate for each lane and comes in regular 11.5×13 mm package. The chip is suitable with the hottest SoCs from Samsung, Qualcomm and many others that guidance the UFS two.1 specification.

Mass creation of 512 GB UFS units allows Samsung to combine them into its approaching smartphones and other shopper electronics items. The firm yet has to ensure irrespective of whether it will use the new storage remedy for the Galaxy S9, but it is attainable that the approaching flagship smartphone from Samsung could have a 512 GB option.

On a facet notice, Samsung also declared designs to raise creation of its sixty four-layer 512 Gb V-NAND chips as effectively as 256 Gb V-NAND chips to meet growing demand for mobile storage, SSDs and other items.

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